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| Power Transistor Arrays (F-MOS FETs) PUB4701 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive unit: mm s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 1.650.2 9.50.2 8.0 25.30.2 4.00.2 4.40.5 0.50.15 1.00.25 2.540.2 9!2.54=22.860.25 0.80.25 0.50.15 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 150 20 6 12 22.5 15 3.5 150 -55 to +150 Unit V V A A mJ W C C C1.50.5 1 2 3 4 5 6 7 8 9 10 G: Gate D: Drain S: Source 10-Lead Plastic SIL Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25C Ta = 25C L = 5mH, IL = 3A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF Coss td(on) tr tf td(off) VGS = 10V, ID = 3A VDD = 100V, RL = 33.3 Conditions VDS = 120V, VGS = 0 VGS = 20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 3A VGS = 4V, ID = 3A VDS = 10V, ID = 3A IDR = 3A, VGS = 0 620 VDS = 10V, VGS = 0, f = 1MHz 120 35 10 30 85 290 3 150 1 0.42 0.5 5.3 -1.7 2.5 0.6 0.7 min typ max 10 1 Unit A A V V S V pF pF pF ns ns ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) 1 Power Transistor Arrays (F-MOS FETs) Area of safe operation (ASO) 16 PUB4701 ID VDS 7 TC=25C PD Ta Allowable power dissipation PD (W) (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink IDP 10 ID 14 12 6 4.0V Drain current ID (A) Drain current ID (A) t=1ms 3 10ms 50ms 1 (1) 10 8 6 (2) 4 (3) 2 0 5 3.5V 4 3 2 3.0V 0.3 Non repetitive pulse TC=25C 3 10 30 100 1 2.5V 0 0 20 40 60 80 100 120 140 160 0 4 8 12 16 20 0.1 Drain to source voltage VDS (V) Ambient temperature Ta (C) Drain to source voltage VDS (V) ID VGS Drain to source ON-resistance RDS(on) (m) 6 VDS=10V TC=25C 5 1.2 RDS(on) ID TC=25C 1.0 Drain current ID (A) 4 0.8 3 0.6 VGS=4V 0.4 10V 2 1 0.2 0 0 2 4 6 8 10 12 0 0 1 2 3 4 5 6 Gate to source voltage VGS (V) Drain current ID (A) 2 |
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